Semiconductor Device and Method of Manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChan Syun David Yang, Li-Te Lin, Chun-Jui Huang
Life of this patent
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Abstract
A semiconductor device such as a fin field effect transistor and its method of manufacture are provided. In some embodiments gate spacers are formed over a semiconductor fin, and a first gate stack is formed over the fin. A first sacrificial material with a large selectivity to the gate spacers is formed over the gate stack, and a second sacrificial material with a large selectivity is formed over a source/drain contact plug. Etching processes are utilized to form openings through the first sacrificial material and through the second sacrificial material, and the openings are filled with a conductive material.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming gate spacers over a semiconductor fin;
- forming a first gate stack adjacent to the gate spacers;
- forming a second gate stack over the semiconductor fin;
- forming a first sacrificial material over the first gate stack and the second gate stack, wherein the first sacrificial material has a dry etch selectivity to the gate spacers of greater than about 12;
- placing a first conductive material and a second sacrificial material into a region between the first gate stack and the second gate stack and between the first sacrificial material over the first gate stack and the first sacrificial material over the second gate stack, wherein the second sacrificial material is different from the first sacrificial material and has an etch selectivity to the gate spacers of greater than about 12;
- etching a first opening through the first sacrificial material;
- and
- etching a second opening through the second sacrificial material.
A method of manufacturing a semiconductor device, the method comprising:
- placing a first photoresist over a first sacrificial material over a substrate;
- forming a first opening through a first portion of the first sacrificial material to expose a capping layer over a gate stack and to expose a sidewall of a gate spacer, wherein the gate spacer and the first sacrificial material have an etch selectivity during the forming the first opening of greater than about 12 when a dry etch is performed;
- placing a second photoresist over a second sacrificial material, wherein the second sacrificial material and the gate spacer have an etch selectivity of greater than about 12;
- forming a second opening at least partially through the second sacrificial material;
- after stopping the forming the second opening, extending the second opening through the second sacrificial material to expose a source/drain contact;
- and
- filling the first opening and the second opening with a conductive material.
A semiconductor device comprising:
- a gate stack;
- a capping layer over the gate stack;
- a first sacrificial layer over the capping layer;
- a gate contact extending through the first sacrificial layer and in physical contact with the capping layer;
- a first spacer adjacent to and in physical contact with each of the gate stack, the capping layer, and the gate contact;
- a source/drain contact adjacent to the first spacer;
- a second sacrificial layer over the source/drain contact, the second sacrificial layer being different from the first sacrificial layer;
- a source/drain contact plug extending through the second sacrificial layer and in physical contact with the source/drain contact;
- and
- a helmet material over the first sacrificial layer and the first spacer.
(canceled)
Dependencies are inferred from the claim text.