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US 2019/0164828 A1Published application
Semiconductor device, interconnection structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMrunal A. KHADERBAD, Yasutoshi OKUNO, Pang-Yen TSAI
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Abstract
A semiconductor device is provided. The semiconductor device includes a source/drain region, a silicide layer on the source/drain region, an interlayer dielectric (ILD) layer over the silicide layer, and a source drain contact. The source/drain contact has a top portion extending through the ILD layer and a bottom portion embedded in the silicide layer.
Claims20
A semiconductor device, comprising:
- a source/drain region on a semiconductor substrate;
- a silicide layer on the source/drain region;
- an interlayer dielectric (ILD) layer over the silicide layer;
- and
- a source/drain contact having a top portion extending through the ILD layer and a bottom portion embedded in the silicide layer.
2 more elements
An interconnection structure, comprising:
- a first interlayer dielectric (ILD) layer;
- a metal line embedded in the first ILD layer;
- a second ILD layer over the metal line;
- and
- a metal via having a top portion extending through the second ILD layer and a bottom portion embedded in the metal line.
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A method, comprising:
- forming a dielectric layer over a non-insulator structure;
- etching the dielectric layer and the non-insulator structure to form a recess through the dielectric layer and in the non-insulator structure;
- laterally expanding a first portion of the recess through the dielectric layer after forming the recess;
- and
- forming a conductive feature in the recess.
2 more elements
Dependencies are inferred from the claim text.