Method for manufacturing semiconductor device and pre-clean apparatus for semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJung-Tang WU, Pao-Sheng CHEN, Pei-Hsuan LEE, Szu-Hua WU, Chih-Chien CHI
Life of this patent
Estimating the term…
Abstract
In a method for manufacturing a semiconductor device, a substrate is provided. Various first metal layers are formed on the substrate. A dielectric structure with through holes is formed over the first metal layers. The through holes expose the first metal layers. A pre-clean operation is performed on the dielectric structure and the first metal layers by using an alcohol base vapor and/or an aldehyde base vapor as a reduction agent. Conductors are formed on the first metal layers. In forming the conductors, the through holes are filled with the conductors.
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- providing a substrate on which a plurality of first metal layers are formed;
- forming a dielectric structure with a plurality of through holes over the first metal layers, wherein the through holes expose the first metal layers;
- performing a pre-clean operation on the dielectric structure and the first metal layers by using an alcohol base vapor and/or an aldehyde base vapor as a reduction agent;
- and
- forming a plurality of conductors on the first metal layers, wherein forming the conductors comprises filling the through holes with the conductors respectively.
A method for manufacturing a semiconductor device, the method comprising:
- providing a substrate on which a plurality of first metal layers are formed;
- forming a plurality of dielectric layers stacked over the first metal layers sequentially;
- forming a plurality of through holes in the dielectric layers, wherein the through holes are formed to expose the first metal layers;
- performing a pre-clean operation to remove oxide film residues on the dielectric layers and the first metal layers, wherein performing the pre-clean operation uses an alcohol base vapor and/or an aldehyde base vapor as a reduction agent;
- and
- forming a plurality of conductors on the first metal layers, wherein forming the conductors comprises filling the through holes with the conductors respectively.
A pre-clean apparatus for a semiconductor device, the pre-clean apparatus comprising:
- a chamber;
- a heating pedestal disposed within the chamber and configured to carry a semiconductor device;
- and
- a vapor supply connected to the chamber via a line and configured to supply a reduction agent into the chamber via the line to pre-clean the semiconductor device held on the heating pedestal, wherein the reduction agent comprises an alcohol base vapor and/or an aldehyde base vapor.
Dependencies are inferred from the claim text.