Physical vapor deposition process for semiconductor interconnection structures

A method of forming a conductive fill material on a substrate, comprising:

• forming a pre-layer of the conductive fill material in a dielectric layer by controlling the substrate at a first substrate temperature;
• reflowing the pre-layer by maintaining the substrate at a second substrate temperature, wherein the second substrate temperature is greater than the first substrate temperature;
• and
• forming a bulk layer of the conductive fill material on the pre-layer by maintaining the substrate at a third substrate temperature, wherein the third substrate temperature is greater than the first substrate temperature, wherein the bulk layer extends into the dielectric layer.

A method comprising:

• forming an opening in a dielectric layer disposed over a substrate, the opening exposing an underlying electrically conductive feature;
• forming a barrier layer along sidewalls of the dielectric layer exposed by the opening and along an upper surface of the electrically conductive feature;
• and
• filling the opening with an electrically conductive fill material, wherein filling the opening comprises:
• forming a pre-layer of the electrically conductive fill material in the opening over the barrier layer at a first temperature;
• reflowing the pre-layer at a second temperature higher than the first temperature;
• and
• forming a bulk layer of the electrically conductive fill material in the opening over the pre-layer at a third temperature after reflowing the pre-layer, the third temperature being higher than the first temperature.