Semiconductor structure and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Chang SUN, Po-Chin CHANG, Akira MINEJI, Zi-Wei FANG, Pinyen LIN
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Abstract
A method for manufacturing a semiconductor structure is provided. The method includes following steps. A MEOL structure is formed on an etch stop layer. A patterned masking layer with at least one opening is formed on the MEOL structure and a first etching process is performed to form a trench in the MEOL structure. A second etching process is performed to modify at least one sidewall of the trench.
Claims23
A method for manufacturing a semiconductor structure, comprising:
- forming a middle end of line (MEOL) structure on an etch stop layer;
- forming a patterned masking layer with at least one opening on the MEOL structure and performing a first etching process to form a trench in the MEOL structure;
- and
- performing a second etching process to modify at least one sidewall of the trench.
(canceled)
(canceled)
A method for manufacturing a semiconductor structure, comprising:
- forming a middle end of line (MEOL) structure on an etch stop layer;
- performing a first etching process to the MEOL structure until reaching the etch stop layer, so as to form a trench in the MEOL structure;
- and
- performing a second etching process to laterally enlarge the trench.
18-20. (canceled)
A method for manufacturing a semiconductor structure, comprising:
- forming a middle end of line (MEOL) structure above a gate structure formed on a semiconductor substrate;
- performing a first etching process to the MEOL structure to form a first trench in the MEOL structure;
- and
- performing a second etching process to reshape the first trench as a second trench, wherein a width variation of the second trench is different than a width variation of the first trench.
Dependencies are inferred from the claim text.