Method for forming semiconductor device structure

A method for forming a semiconductor device structure, comprising:

• forming a first recess and a second recess in a layer, wherein the first recess is narrower than the second recess;
• forming a first covering layer in the first recess and the second recess, wherein the first covering layer in the first recess is thinner than the first covering layer in the second recess, and the first covering layer covers a first inner wall and a first bottom surface of the second recess;
• removing the first covering layer in the first recess and the first covering layer covering the first bottom surface;
• and
• filling a filling layer into the first recess and the second recess.

A method for forming a semiconductor device structure, comprising:

• forming a recess in a layer, wherein the recess has two opposite first inner walls and two opposite second inner walls, the first inner walls are spaced apart by a first distance, the second inner walls are spaced apart by a second distance, and the first distance is less than the second distance;
• depositing a first covering layer in the recess, wherein the first covering layer covering the first inner walls is thinner than the first covering layer covering the second inner walls;
• and
• removing the first covering layer over the first inner walls and a bottom surface of the recess.