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US 2019/0164810 A1Published application
Semiconductor structure including inter-layer dielectric
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTa-wei SUNG, Ming-Hui LI, Ming-Ying TSAI
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Abstract
A semiconductor structure includes a gate structure over a substrate. The semiconductor structure includes an inter-layer dielectric (ILD) over the substrate, wherein an upper portion of the ILD has a higher concentration of silicon atoms than a bottom portion of the ILD.
Claims20
A semiconductor structure comprising:
- a gate structure over a substrate;
- and
- an inter-layer dielectric (ILD) over the substrate, wherein an upper portion of the ILD has a higher concentration of silicon atoms than a bottom portion of the ILD.
A semiconductor structure comprising:
- a plurality of gate structures over a substrate;
- and
- an inter-layer dielectric (ILD) between adjacent gate structures of the plurality of gate structures, wherein a first portion of the ILD has a higher concentration of silicon than a second portion of the ILD.
A semiconductor structure comprising:
- a plurality of gate structures over a substrate;
- and
- an inter-layer dielectric (ILD) between adjacent gate structures of the plurality of gate structures, wherein the ILD has a gradient concentration of silicon, and a silicon concentration in the ILD increases as a distance from the substrate increases.
Dependencies are inferred from the claim text.