Buried Metal for FinFET Device and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLei-Chun Chou, Chih-Liang Chen, Jiann-Tyng Tzeng, Chih-Ming Lai, Ru-Gun Liu, Charles Chew-Yuen Young
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLei-Chun Chou, Chih-Liang Chen, Jiann-Tyng Tzeng, Chih-Ming Lai, Ru-Gun Liu, Charles Chew-Yuen Young
Estimating the term…
A semiconductor device includes a buried metal line disposed in a semiconductor substrate, a first dielectric material on a first sidewall of the buried metal line and a second dielectric material on a second sidewall of the buried metal line, a first multiple fins disposed proximate the first sidewall of the buried metal line, a second multiple fins disposed proximate the second sidewall of the buried metal line, a first metal gate structure over the first multiple fins and over the buried metal line, wherein the first metal gate structure extends through the first dielectric material to contact the buried metal line, and a second metal gate structure over the second multiple fins and over the buried metal line.
A method comprising:
A method comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.