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US 2019/0164779 A1Published application
Corrosion-resistant solid-state photo-electrode
AssigneeInternational Business Machines Corporation
InventorsBahman Hekmatshoartabari, Ali Afzali-Ardakani, Oki Gunawan, Ghavam G. Shahidi
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Abstract
Embodiments of the present invention provide systems and methods for constructing photo-electrodes. Hydrogenated crystalline silicon is disposed over an absorption layer, wherein the hydrogenated crystalline silicon is attached to self-assembled monolayers (SAMs). Metal electrodes are disposed over the SAMs. Surface passivation is achieved by the hydrogenated crystalline silicon and the SAMs. Resistance to surface corrosion is provided by the SAMs.
Claims20
A method, comprising:
- providing an absorption layer comprised of a semiconductor material;
- epitaxially growing a hydrogenated silicon layer on the absorption layer using chemical vapor deposition;
- forming a plurality of self-assembled monolayers (SAMs) on the hydrogenated silicon layer;
- and
- coating the plurality of SAMs with one or more metals.
2 more elements
A photo-electrode, comprising:
- an absorption layer, wherein the absorption layer is comprised of a semiconductor material;
- a plurality of self-assembled monolayers (SAMs) disposed on the absorption layer;
- and
- a metal electrode disposed on a surface of the plurality of SAMs.
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A photo-electrode, comprising:
- an absorption layer, wherein the absorption layer is comprised of a semiconductor material;
- a hydrogenated crystalline silicon layer disposed on the absorption layer;
- a plurality of self-assembled monolayers (SAMs) disposed on the hydrogenated crystalline silicon layer, wherein the hydrogenated crystalline silicon layer passivates the absorption layer;
- and
- a metal electrode disposed on a surface of the plurality of SAMs.
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Dependencies are inferred from the claim text.