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US 2019/0164775 A1Published application
Etching method and etching apparatus
AssigneeTokyo Electron Limited
InventorTakashi FUSE
Life of this patent
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Abstract
An etching method includes: forming straight-chain molecules containing CFx on a substrate to be etched; and irradiating the substrate on which the molecules are formed with an activation gas that activates the CFx.
Claims5
An etching method comprising:
- forming straight-chain molecules containing CFx on a substrate to be etched;
- and
- irradiating the substrate on which the molecules are formed with an activation gas that activates the CFx.
Dependencies are inferred from the claim text.