Etching method and methods of manufacturing semiconductor device using the same

A method of manufacturing a semiconductor device, the method comprising:

• forming an upper insulation interlayer including silicon oxide and covering a capping pattern and a lower insulation interlayer, the capping pattern being disposed on a gate structure, the lower insulation interlayer covering a source/drain layer adjacent to the gate structure;
• and
• forming a contact hole passing through the upper insulation interlayer and the lower insulation interlayer to expose the source/drain layer,
• wherein forming the contact hole includes:
• forming a mask including silicon nitride on the upper insulation interlayer,
• providing a plasma of a first treatment gas to form a deposition layer on the mask and on an exposed upper surface of the upper insulation interlayer, the first treatment gas including a fluorocarbon gas and an inert gas,
• subsequently, providing a plasma of an inert gas to activate an etching reaction of the silicon oxide, wherein a negative direct current voltage is applied to an opposing part that is spaced apart from an etching-object to face an etching surface of the etching-object, the opposing part including silicon, and
• subsequently, providing a plasma of a second treatment gas to remove an etching reaction product, the a second treatment gas including an inert gas and an oxygen-containing gas.

A method of manufacturing a semiconductor device, the method comprising:

• forming an insulation interlayer on a gate structure and on a source/drain layer adjacent to the gate structure;
• and
• forming a contact hole passing through the insulation interlayer to expose the source/drain layer,
• wherein forming the contact hole includes:
• forming a mask including silicon nitride on the insulation interlayer,
• providing a plasma of a first treatment gas to form a deposition layer on the mask and on an exposed upper surface of the insulation interlayer, the first treatment gas including a fluorocarbon gas and an inert gas,
• subsequently, providing a plasma of an inert gas, wherein a silicon ion is applied to the deposition layer when the plasma of the inert gas is provided, and
• subsequently, providing a plasma of a second treatment gas that includes an inert gas and an oxygen-containing gas.