Method of patterning
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChin-Yuan TSENG, Yu-Tien SHEN, Wei-Liang LIN, Chih-Ming LAI, Kuo-Cheng CHING, Shi Ning JU, Li-Te LIN, Ru-Gun LIU
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChin-Yuan TSENG, Yu-Tien SHEN, Wei-Liang LIN, Chih-Ming LAI, Kuo-Cheng CHING, Shi Ning JU, Li-Te LIN, Ru-Gun LIU
Estimating the term…
A method of reducing corner rounding during patterning of a substrate to form a prescribed pattern comprising a corner includes dividing the pattern into a first pattern and a second pattern, the first pattern forming a first edge of the corner and the second pattern forming a second edge of the corner. At least a portion of the second pattern overlaps the first pattern such that the first edge intersects with the second edge to form a corner of the prescribed pattern. The method further includes forming the first pattern in a first mask layer disposed on a substrate to expose the substrate and forming the second pattern in the first mask layer to expose the substrate. The substrate exposed through the first mask layer is then etched to obtain the pattern.
A method of patterning, the method comprising:
A method of patterning to obtain a prescribed pattern in a substrate, the prescribed pattern having one or more first edges in a first direction and one or more second edges in a second direction, the first edges and the second edges forming corners of the prescribed pattern, the method comprising:
A method of reducing corner rounding during patterning of a substrate to form a prescribed pattern comprising a corner, the method comprising:
Dependencies are inferred from the claim text.