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US 2019/0164768 A1Published application
Film Forming Method
AssigneeTokyo Electron Limited
InventorsKensaku NARUSHIMA, Atsushi MATSUMOTO, Nagayasu HIRAMATSU, Takanobu HOTTA
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Abstract
There is provided a method of forming a tungsten nitride film on a substrate to be processed, including: forming a tungsten film by repeating a cycle of alternately supplying a tungsten chloride gas and a hydrogen-containing gas with a supply of a purge gas interposed between the supply of the tungsten chloride gas and the supply of the hydrogen-containing gas; and nitriding the tungsten film by supplying a nitrogen-containing gas.
Claims6
A method of forming a tungsten nitride film on a substrate to be processed, comprising:
- forming a tungsten film by repeating a cycle of alternately supplying a tungsten chloride gas and a hydrogen-containing gas with a supply of a purge gas interposed between the supply of the tungsten chloride gas and the supply of the hydrogen-containing gas;
- and
- nitriding the tungsten film by supplying a nitrogen-containing gas.
Dependencies are inferred from the claim text.