Semiconductor device and manufacturing method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsMing-Hwei HONG, Juei-Nai KWO, Yen-Hsun LIN, Keng-Yung LIN, Bo-Yu YANG, Hsien-Wen WAN
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Abstract
A method for manufacturing a semiconductor device includes forming a first high-k dielectric layer on a semiconductor substrate; forming a second high-k dielectric layer on the first high-k dielectric layer, in which the second high-k dielectric layer includes a material different from a material of the first high-k dielectric layer; annealing the first and second high-k dielectric layers, such that the first and second high-k dielectric layers are inter-diffused; and forming a gate electrode over the second high-k dielectric layer.
Claims20
A method for manufacturing a semiconductor device, the method comprising:
- forming a first high-k dielectric layer on a semiconductor substrate;
- forming a second high-k dielectric layer on the first high-k dielectric layer, wherein the second high-k dielectric layer comprises a material different from a material of the first high-k dielectric layer;
- annealing the first and second high-k dielectric layers, such that the first and second high-k dielectric layers are inter-diffused;
- and
- forming a gate electrode over the second high-k dielectric layer.
A method for manufacturing a semiconductor device, the method comprising:
- forming a first high-k dielectric layer on a semiconductor substrate, wherein the first high-k dielectric layer has a thickness less than about 5 Å;
- forming a second high-k dielectric layer on the first high-k dielectric layer, wherein the second high-k dielectric layer comprises a material different from a material of the first high-k dielectric layer;
- and
- forming a gate electrode over the second high-k dielectric layer.
A semiconductor device, comprising:
- a semiconductor substrate;
- a gate electrode over the semiconductor substrate;
- and
- a gate dielectric stack between the gate electrode and the semiconductor substrate and comprising a first high-k dielectric layer and a second high-k dielectric layer between the first high-k dielectric layer and the gate electrode, wherein the second high-k dielectric layer has a thickness less than about 5 Å.
Dependencies are inferred from the claim text.