Self-Protective Layer Formed on High-K Dielectric Layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJu-Li Huang, Ying-Liang Chuang, Ming-Hsi Yeh, Kuo-Bin Huang
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Abstract
Semiconductor device structures having metal gate structures with tunable work function values are provided. In one example, a first gate structure and a second gate structure formed on a substrate, wherein the first gate structure includes a first work function metal having a first material, and the second gate structure includes a second work function metal having a second material, the first material being different from the second material, wherein the first gate structure further includes a gate dielectric layer, a self-protective layer having metal phosphate, and the first work function metal on the self-protective layer.
Claims20
A method for forming a semiconductor device, comprising:
- patterning a first work function metal on a gate dielectric layer disposed on a substrate using an etching solution, wherein the etching solution includes phosphoric acid and hydrogen peroxide in an acid solution;
- and
- upon removal of the first work function metal from the substrate, forming a self-protective layer on the gate dielectric layer by exposing the gate dielectric layer to the etching solution.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a gate dielectric between spacers over a semiconductor fin;
- depositing a first work function layer over the gate dielectric;
- applying an etchant to the first work function layer, wherein the etchant will both remove a portion of the first work function layer and also react with a portion of the gate dielectric to form a self-protective layer.
A method of manufacturing a semiconductor device, the method comprising:
- removing a dummy gate from over a semiconductor fin;
- depositing a high-k gate dielectric layer over the semiconductor fin, the high-k gate dielectric layer comprising a first reactant after the depositing the high-k gate dielectric layer;
- depositing a first work function layer over the high-k gate dielectric layer;
- using an etchant to remove a portion of the first work function layer and expose the high-k gate dielectric layer, the etchant comprising a second reactant;
- reacting the first reactant and the second reactant to form a self-protective layer, the self-protective layer being located over a portion of the high-k gate dielectric layer;
- and
- depositing a gate electrode over the self-protective layer.
Dependencies are inferred from the claim text.