Method of manufacturing semiconductor device
AssigneeRenesas Electronics Corporation
InventorHideki MAKIYAMA
Life of this patent
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Abstract
Reliability of a semiconductor device is improved. In a method of manufacturing a semiconductor device, nitrogen is introduced into a surface of a substrate and a sacrificial film is formed on the surface in a field effect transistor formation region different from a memory transistor formation region. Subsequently, the sacrificial film is removed to remove the nitrogen introduced in the surface of the substrate in the field effect transistor formation region.
Claims14
A method of manufacturing a semiconductor device having a first field effect transistor formation region and a memory transistor formation region, the method comprising the steps of:
- (a) forming a first insulating film on a surface of a substrate in the memory transistor formation region;
- (b) after the step (a), performing heat treatment on the substrate in an atmosphere containing nitrogen to introduce nitrogen into the first insulating film in the memory transistor formation region;
- (c) after the step (b), forming a second insulating film having a trap level on the first insulating film in the memory transistor formation region, and on the first field effect transistor formation region;
- (d) after the step (c), exposing the surface of the substrate in the first field effect transistor formation region;
- (e) after the step (d), forming a sacrificial film on the surface of the substrate in the first field effect transistor formation region;
- (f) after the step (e), removing the sacrificial film;
- (g) after the step (f), forming a third insulating film on the surface of the substrate in the first field effect transistor formation region and on the second insulating film in the memory transistor formation region;
- (h) after the step (g), forming a first conductor film from on the third insulating film formed in the first field effect transistor formation region to on the third insulating film formed in the memory transistor formation region;
- and
- (i) after the step (h), patterning the first conductor film to form a first gate electrode in the first field effect transistor formation region and forma memory gate electrode in the memory transistor formation region.
Dependencies are inferred from the claim text.