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US 2019/0164761 A1Published application
Method for doping silicon sheets
AssigneeIon Beam Services
InventorsBernard BECHEVET, Johann JOURDAN
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Abstract
A method of doping a silicon wafer in order to fabricate a photovoltaic cell, the method including the steps of: performing a first doping operation of at least a first portion (11) of a surface (10) of the silicon wafer; forming an oxide layer (40) on the partially doped surface (10); and performing a second doping operation through the oxide layer (40), so as to dope another portion (12) of the surface (10) of the silicon wafer.
Claims11
A method of fabricating a photovoltaic cell by doping a silicon wafer, the method comprising the steps of:
- performing a first doping operation of at least a first portion of a surface of the silicon wafer;
- forming an oxide layer on the partially doped surface, said oxide layer covering both said first portion and another portion of said surface of said silicon wafer;
- and
- performing a second doping operation through the oxide layer, so as to dope said another portion of the surface of the silicon wafer.
1 more element
Dependencies are inferred from the claim text.