Method of improving deposition induced cd imbalance using spatially selective ashing of carbon based film
AssigneeLam Research Corporation
InventorsIshtak KARIM, Pulkit AGARWAL, Joseph ABEL, Purushottam KUMAR, Adrien LAVOIE
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Abstract
A method for forming features over a wafer with a carbon based deposition is provided. The carbon based deposition is pretuned, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition. An oxide deposition of a silicon oxide based material is deposited through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition, which is complementary to the non-uniform removal of some of the carbon based deposition by the pretuning.
Claims19
A method for forming features over a wafer with a carbon based deposition, comprising:
- pretuning the carbon based deposition, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition;
- and
- depositing an oxide deposition of a silicon oxide based material through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition, which is complementary to the non-uniform removal of some of the carbon based deposition by the pretuning.
A method for forming features over a wafer with a carbon based deposition, comprising:
- pretuning the carbon based deposition, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition;
- depositing an oxide deposition through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition;
- and
- providing at least one additional process, wherein the at least one additional process completes formation of features over the wafer, wherein the features are more uniform than features that would be formed without pretuning.
Dependencies are inferred from the claim text.