Selective Capping Processes and Structures Formed Thereby

A method of manufacturing a semiconductor device, the method comprising:

• forming a first dielectric layer over a substrate;
• forming a conductive feature, wherein after the forming the first dielectric layer and the forming the conductive feature the conductive feature is located within the first dielectric layer;
• after the forming the conductive feature, terminating the first dielectric layer with a species comprising a hydrophobic functional group to form a dielectric surface;
• forming a metal cap on the conductive feature without forming a material of the metal cap over on the dielectric surface;
• and
• forming a second dielectric layer on the dielectric surface and the metal cap.

A method of manufacturing a semiconductor device, the method comprising:

• forming a gate structure over an active area on a substrate;
• forming a first dielectric layer over the substrate and along the gate structure;
• terminating surfaces of the first dielectric layer with a chemical selected from the group consisting of tetramethylsilane (Si(CH3)4), N,N-Dimethyltrimethylsilylamine ((CH3)2—N—Si—(CH3)3), or a combination thereof, wherein the terminated surface is a self-aligned monolayer;
• forming a metal cap on the gate structure;
• forming a second dielectric layer over the metal cap and the first dielectric layer;
• and
• forming a conductive feature through the second dielectric layer to the metal cap.