Method of selective deposition for forming fully self-aligned vias
AssigneeTokyo Electron Limited
InventorKandabara Tapily
Life of this patent
Estimating the term…
Abstract
Methods are provided for selective film deposition. One method includes providing a substrate containing a dielectric material and a metal layer, the metal layer having an oxidized metal layer thereon, coating the substrate with a metal-containing catalyst layer, treating the substrate with an alcohol solution that removes the oxidized metal layer from the metal layer along with the metal-containing catalyst layer on the oxidized metal layer, and exposing the substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO2 film on the metal-containing catalyst layer on the dielectric material.
Claims20
A substrate processing method, comprising:
- providing a substrate containing a dielectric material and a metal layer, the metal layer having an oxidized metal layer thereon;
- coating the substrate with a metal-containing catalyst layer;
- treating the substrate with an alcohol solution that removes the oxidized metal layer from the metal layer and the metal-containing catalyst layer on the oxidized metal layer;
- and
- exposing the substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO2 film on the metal-containing catalyst layer on the dielectric material.
A substrate processing method, comprising:
- providing a substrate containing a dielectric material and a metal layer, the metal layer having an oxidized metal layer thereon;
- exposing the substrate to a reactant gas containing a molecule that forms self-assembled monolayers (SAMs) on the substrate;
- and
- selectively depositing a metal oxide film on the dielectric material relative to the oxidized metal layer by exposing the substrate to a deposition gas;
- and
- exposing the substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO2 film on the metal oxide film.
A substrate processing method, comprising:
- providing a substrate containing a dielectric material and a metal layer, the metal layer having an oxidized metal layer thereon;
- exposing the substrate to hydrogen (H2) gas excited by a plasma source;
- selectively depositing a metal oxide film on the dielectric material by exposing the substrate to a deposition gas;
- and
- exposing the substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO2 film on the metal oxide film.
Dependencies are inferred from the claim text.