Conductive feature formation and structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Wei CHANG, Huang-Yi HUANG, Chun-chieh WANG, Yu-Ting LIN, Min-Hsiu HUNG
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Abstract
Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.
Claims20
A method of manufacturing a conductive structure comprising:
- forming a dielectric layer on a semiconductor substrate, the semiconductor substrate having a source/drain region;
- forming an opening through the dielectric layer to the source/drain region;
- and
- by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process, forming a silicide region on the source/drain region and a barrier layer in the opening along sidewalls of the dielectric layer.
A method of manufacturing a conductive structure comprising:
- by a Plasma-Enhance Chemical Vapor Deposition (PECVD) process, forming a barrier layer of a conductive feature over a semiconductor substrate, wherein the PECVD process includes:
- reacting, in a gaseous reaction, titanium tetrachloride (TiCl4) and hydrogen (H2) to produce titanium chloride (TiClx);
- reacting, in a first surface reaction, at least some of the titanium chloride (TiClx) with hydrogen (H2) to produce titanium (Ti);
- and
- reacting, in a second surface reaction, at least some of the titanium (Ti) with ammonia (NH3) to produce titanium nitride (TixNy), wherein the barrier layer comprises the titanium nitride (TixNy).
A structure comprising:
- a substrate comprising an active area, the active area comprising a source/drain region;
- a dielectric layer over the substrate, the dielectric layer having a sidewall extending from a top surface of the dielectric layer to the source/drain region;
- and
- a conductive feature contacting the source/drain region, the conductive feature comprising:
- a silicide region on the source/drain region at the sidewall of the dielectric layer;
- a barrier layer along the sidewall of the dielectric layer, wherein the barrier layer comprises chlorine;
- and
- a conductive material on the barrier layer and above the silicide region, the barrier layer being disposed between the conductive material and the sidewall of the dielectric layer.
Dependencies are inferred from the claim text.