Method for manufacturing a semiconductor device and a coating material
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Ling Chang CHIEN, Chien-Chih CHEN, Chin-Hsiang LIN, Ching-Yu CHANG, Joy CHENG
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Abstract
In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.
Claims21
A method of manufacturing a semiconductor device, the method comprising:
- forming an underlying structure;
- forming a surface grafting layer on the underlying structure;
- and
- forming a photo resist layer on the surface grafting layer,
- wherein the surface grafting layer includes a coating material comprising:
- a backbone polymer;
- a surface grafting unit coupled to an end of the backbone polymer;
- and
- an adhesion unit different from the surface grafting unit and coupled to the backbone polymer as a side chain.
A method of manufacturing a semiconductor device, the method comprising:
- forming an underlying structure;
- forming a first layer on the underlying structure;
- forming a second layer on the first layer, the second layer including a silicon based material;
- forming a surface grafting layer on the second layer;
- and
- forming a photo resist layer on the surface grafting layer,
- wherein the surface grafting layer includes a coating material comprising:
- a backbone polymer;
- a surface grafting unit coupled to an end of the backbone polymer;
- and
- an adhesion unit different from the surface grafting unit and coupled to the backbone polymer as a side chain.
12-20. (canceled)
A method of manufacturing a semiconductor device, the method comprising:
- forming an underlying structure;
- forming a first dielectric layer over the underlying structure;
- forming a silicon nitride layer on the first dielectric layer;
- forming a second dielectric layer on the silicon nitride layer;
- forming a first hard mask layer on the second dielectric layer;
- forming a bottom layer on the hard mask layer;
- forming a middle layer on the bottom layer;
- forming a surface grafting layer on the middle layer;
- forming a photo resist layer on the surface grafting layer;
- patterning the photo resist layer, thereby forming a resist pattern;
- and
- etching the surface grafting layer and the middle layer by using the resist pattern as an etching mask,
- wherein the surface grafting layer includes a coating material comprising:
- a backbone polymer;
- a surface grafting unit coupled to an end of the backbone polymer;
- and
- an adhesion unit different from the surface grafting unit and coupled to the backbone polymer as a side chain.
Dependencies are inferred from the claim text.