Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• forming a first insulator;
• forming a charge storage layer on a surface of the first insulator;
• and
• forming a second insulator on a surface of the charge storage layer,
• wherein
• the first or the second insulator includes a silicon oxynitride film, and
• the silicon oxynitride film is formed using a first gas that includes silicon and a first element, a second gas that includes oxygen and nitrogen, and a third gas that includes a second element which reacts with the first element.

A semiconductor device comprising:

• a plurality of conductive layers and a plurality of insulators that are alternately provided on a substrate;
• a first insulator provided in the conductive layers and the insulators;
• a charge storage layer provided on a surface of the first insulator;
• a second insulator provided on a surface of the charge storage layer;
• and
• a semiconductor layer provided on a surface of the second insulator,
• wherein
• the second insulator includes a silicon oxynitride film containing hydrogen,
• concentration of nitrogen with respect to silicon, oxygen and nitrogen in the silicon oxynitride film is equal to or higher than 15 at % and equal to or lower than 30 at %, and
• concentration of hydrogen in the silicon oxynitride film is equal to or lower than 2×1021 [atoms/cm3].