Semiconductor manufacturing apparatus

A dry etching method using an etching apparatus, the etching apparatus comprising:

• a chamber configured to contain a substrate therein;
• a mount part configured to have the substrate mounted thereon;
• a plurality of first members provided between an inner wall of the chamber and a plasma generation region above the mount part in planes substantially parallel to a surface of the mount part and arranged in a first direction perpendicular to the substrate along an inner wall of the chamber, the first members being separated from each other with a first gap in the first direction;
• and a plurality of optical transmitters respectively having first ends facing to the plasma generation region, the optical transmitters being arranged in the first direction and substantially overlapping each other when seen from the first direction, the method comprising:
• dry-etching a substrate in the chamber;
• and
• receiving plasma emission at a plurality of detection points arranged along the first direction in the plasma generation region using the optical transmitters during the dry etching.

A dry etching method using an etching apparatus, the etching apparatus comprising:

• a chamber configured to contain a substrate therein;
• a mount part configured to have the substrate mounted thereon;
• a plurality of first members provided between an inner wall of the chamber and a plasma generation region above the mount part in planes substantially parallel to a surface of the mount part and arranged in a first direction perpendicular to the substrate along an inner wall of the chamber, the first members being separated from each other with a first gap in the first direction, the first members including openings facing toward a side of the plasma generation region and configured to move in the first direction;
• a group of first optical transmitters respectively having first ends provided on sides of the openings to face the plasma generation region, the first optical transmitters being arranged in the first direction and substantially overlapping each other when seen from the first direction;
• a group of second optical transmitters respectively including first ends provided on sides of the openings to face the plasma generation region, the second optical transmitters being arranged in the first direction and substantially overlapping each other when seen from the first direction, the second optical transmitters being provided in different positions from the first optical transmitters on a same plane parallel to a surface of the mount part;
• an optical analyzer connected to second ends of the optical transmitters outside of the chamber, the second ends being different sides of the optical transmitters, the optical analyzer configured to split plasma emission according to wavelength bands and detect the plasma emission of the respective wavelength bands, the method comprising:
• dry-etching a substrate in the chamber;
• and
• receiving plasma emission at a plurality of detection points in the plasma generation region using the groups of the first and second optical transmitters during the dry etching.