Apparatus and method for controlling wafer uniformity

A wafer process chamber comprising:

• a support configured to support a wafer when the wafer is placed on the support and processed;
• a plurality of temperature control elements coupled to the support, wherein
• each of the temperature control elements corresponds to a different portion of the wafer respectively such that the temperature control elements correspond to different portions of the wafer, and
• each of the temperature control elements is configured to individually control temperature of a corresponding portion of the wafer;
• and
• a processor configured to
• determine at least one portion of the wafer for temperature uniformity control, and
• instruct at least one of the temperature control elements, corresponding to the at least one portion, to adjust temperature of the at least one portion for controlling temperature uniformity of the wafer.

A method for controlling wafer uniformity, comprising:

• corresponding each of a plurality of temperature control elements to a different portion of a wafer respectively;
• configuring each of the temperature control elements to individually control temperature of a corresponding portion of the wafer;
• determining at least one portion of the wafer for temperature uniformity control of the wafer;
• selecting at least one temperature control element, among the plurality of temperature control elements, corresponding to the at least one portion;
• and
• adjusting, during an inline plasma enhanced process of the wafer, temperature of the at least one portion for controlling temperature uniformity of the wafer.