Perovskite surface defect passivation using zwitterionic amino acids
AssigneeNUtech Ventures
InventorsXiao Cheng Zeng, Jinsong Huang, Dai Jun, Shuang Yang
Life of this patent
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Abstract
Semiconductor devices including a cathode layer, an anode layer, an active layer disposed between the cathode layer and the anode layer, wherein the active layer includes a perovskite layer, and a passivation layer disposed directly on a surface of the active layer between the cathode layer and the active layer, the passivation layer including a zwitterionic amino acid, such as valine or phenylalanine or other amino acid that passivates both cationic and anionic defects in the surface of the active layer.
Claims22
A semiconductor device, comprising:
- a cathode layer;
- an anode layer;
- an active layer disposed between the cathode layer and the anode layer, where the active layer includes a perovskite layer;
- and
- a passivation layer disposed directly on a surface of the active layer between the cathode layer and the active layer, the passivation layer comprising a layer of material that passivates both cationic and anionic defects in the surface of the active layer, wherein the layer of material comprises a zwitterionic amino acid.
A semiconductor device, comprising:
- a cathode layer;
- an anode layer;
- an active layer disposed between the cathode layer and the anode layer, where the active layer includes an organometal trihalide perovskite having the formula ABX3, or A2BX4, wherein A is methylammonium (CH3NH3+), an alkali metal ion or formamidinium (H2NCHNH2+), B is a metal cation, and X is a halide anion, thiocyanate (SCN-) or a mixture thereof;
- a passivation layer disposed directly on a surface of the active layer between the cathode layer and the active layer, the passivation layer comprising a layer of material that passivates both cationic and anionic defects in the surface of the active layer, wherein the layer of material comprises a zwitterionic amino acid;
- an electron extraction layer disposed directly on the passivation layer between the passivation layer and the cathode layer, the electron extraction layer comprising a layer of C60;
- a first carrier transport layer comprising bathocuproine (BCP) and disposed between the electron extraction layer and the cathode;
- and
- a second carrier transport layer comprising Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) and disposed between the active layer and the anode.
A method of making a semiconductor device, the process comprising:
- providing an active layer, where the active layer includes a perovskite material;
- and
- applying a passivation layer directly on a surface of the active layer, the passivation layer comprising a first material that passivates both cationic and anionic defects in the surface of the active layer, wherein the first material comprises a zwitterionic amino acid.
Dependencies are inferred from the claim text.