Enhanced erase retry of non-volatile storage device

An apparatus comprising:

• means for performing an erase operation on an erase block of a non-volatile storage medium, the erase block comprising one or more select gate drain storage elements;
• means for determining that the erase operation performed on the erase block failed;
• means for modifying one or more settings for the one or more select gate drain storage elements, the one or more settings comprising a voltage setting for the one or more select gate drain storage elements;
• and
• means for retrying the erase operation on the erase block based on the one or more modified settings for the one or more select gate drain storage elements.

A system comprising:

• a non-volatile memory device, the non-volatile memory device comprising a three-dimensional NAND flash device having a plurality of erase blocks;
• and
• a controller for the non-volatile memory device, the controller performing operations for:
• configuring one or more parameters of select gate drain storage elements of an erase block of the non-volatile memory device in response to an erase operation failing, the one or more parameters comprising an erase bit ignore parameter, the erase bit ignore parameter defining an acceptable bit failure threshold for the erase block;
• retrying the erase operation on the erase block using the one or more configured parameters of the select gate drain storage elements;
• and
• verifying that the erase operation performed on the erase block using the one or more configured parameters of the select gate drain storage elements successfully passed.