Semiconductor memory device and operation method thereof
AssigneeSK hynix Inc.
InventorHee Youl LEE
Life of this patent
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Abstract
A semiconductor memory device includes a cell string and a peripheral circuit. The cell string includes a plurality of memory cells coupled between a common source line and a bit line. The peripheral circuit controls a voltage supplied to the cell string to program a selected memory cell of the cell string by performing a program loop including a program section, a detrap section, and a verify section. Also, the peripheral circuit is configured to supply a program voltage to a word line coupled to the selected memory cell among the plurality of memory cells during the program section. The peripheral circuit further supplies a detrap voltage to the cell string during the detrap section and supplies a verify voltage to the word line during the verify section.
Claims23
A semiconductor memory device comprising:
- a cell string including a plurality of memory cells;
- and
- a peripheral circuit configured to control a voltage supplied to the cell string to program a selected memory cell of the plurality of memory cells of the cell string,
- wherein the peripheral circuit is further configured to apply a detrap voltage to the cell string after a program voltage is applied to a word line coupled to the selected memory cell in a program operation.
A method for operating a semiconductor memory device, the method comprising:
- applying a program voltage to a word line coupled to a selected memory cell of a plurality of memory cells included in a cell string of the semiconductor memory device;
- and
- performing a detrap operation, using a detrap voltage, on the selected memory cell.
Dependencies are inferred from the claim text.