Magnetic tunnel junction devices and magnetoresistive memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsKEN MACHIDA, YOSHIAKI SONOBE, TAKESHI KATO
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Abstract
Magnetic tunnel junction devices are provided. A magnetic tunnel junction device includes a pinned layer. The magnetic tunnel junction device includes a free layer on the pinned layer. The free layer includes a first layer, a second layer that is on the first layer, and a third layer that is between the first layer and the second layer. A Curie temperature of the third layer is lower than a Curie temperature of the first layer and lower than a Curie temperature of the second layer. Moreover, the magnetic tunnel junction device includes an insulating layer that is between the pinned layer and the free layer. Related magnetoresistive memory devices are also provided.
Claims20
A magnetic tunnel junction device comprising:
- a free layer comprising a changeable magnetization direction;
- a pinned layer configured to maintain a predetermined magnetization direction;
- and
- an insulating layer between the free layer and the pinned layer,
- wherein the free layer comprises:
- a perpendicularity maintaining layer configured to maintain a magnetization direction in a direction parallel to an easy axis of magnetization;
- a polarizable magnetic layer;
- and
- a magnetic coupling control layer between the perpendicularity maintaining layer and the polarizable magnetic layer, and
- wherein a Curie temperature of the magnetic coupling control layer is lower than a Curie temperature of the perpendicularity maintaining layer and a Curie temperature of the polarizable magnetic layer, and
- wherein the magnetic coupling control layer is configured to reduce magnetic coupling of the perpendicularity maintaining layer and the polarizable magnetic layer as a temperature rises.
A magnetoresistive memory device comprising:
- a magnetic tunnel junction device;
- and
- an electrode configured to apply a voltage to the magnetic tunnel junction device,
- wherein the magnetic tunnel junction device comprises:
- a free layer comprising a changeable magnetization direction;
- a pinned layer configured to maintain a predetermined magnetization direction;
- and
- an insulating layer between the free layer and the pinned layer,
- wherein the free layer comprises:
- a perpendicularity maintaining layer configured to maintain a magnetization direction in a direction parallel to an easy axis of magnetization;
- a polarizable magnetic layer;
- and a magnetic coupling control layer between the perpendicularity maintaining layer and the polarizable magnetic layer,
- wherein a Curie temperature of the magnetic coupling control layer is lower than a Curie temperature of the perpendicularity maintaining layer and a Curie temperature of the polarizable magnetic layer, and
- wherein the magnetic coupling control layer is configured to reduce magnetic coupling of the perpendicularity maintaining layer and the polarizable magnetic layer as a temperature rises.
A magnetic tunnel junction device comprising:
- a pinned layer;
- a free layer on the pinned layer, wherein the free layer comprises:
- a first layer;
- a second layer on the first layer;
- and
- a third layer that is between the first layer and the second layer, wherein a Curie temperature of the third layer is lower than a Curie temperature of the first layer and lower than a Curie temperature of the second layer;
- and
- an insulating layer that is between the pinned layer and the free layer.
Dependencies are inferred from the claim text.