Spin-orbit torque mrams and method for fabricating the same
AssigneeIndustrial Technology Research Institute
InventorsYu-Sheng CHEN, I-Jung WANG
Life of this patent
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Abstract
A spin-orbit torque MRAM is provided. The spin-orbit torque MRAM includes a spin Hall metal layer, a free magnetic layer disposed on the spin Hall metal layer, a barrier layer, and a pinned layer. The free magnetic layer includes a first area and a second area located on both sides thereof. The barrier layer includes a first area and a second area located on both sides thereof. The first area of the barrier layer is disposed on that of the free magnetic layer, and the second area of the barrier layer is disposed on that of the free magnetic layer. The pinned layer is disposed on the first area of the barrier layer.
Claims22
A spin-orbit torque MRAM, comprising:
- a spin Hall metal layer;
- a free magnetic layer disposed on the spin Hall metal layer;
- a barrier layer disposed on the free magnetic layer, wherein the barrier layer comprises a first area and a second area located on both sides of the first area, wherein the second area has a thickness that is equal to or smaller than that of the first area;
- and
- a pinned layer disposed on the first area of the barrier layer.
A spin-orbit torque MRAM, comprising:
- a spin Hall metal layer;
- a free magnetic layer disposed on the spin Hall metal layer, wherein the free magnetic layer comprises a first area and a second area located on both sides of the first area, and the second area has a thickness that is equal to or smaller than that of the first area;
- a barrier layer disposed on the first area of the free magnetic layer;
- and
- a pinned layer disposed on the barrier layer.
A method for fabricating a spin-orbit torque MRAM, comprising:
- providing a spin Hall metal layer;
- disposing a free magnetic layer on the spin Hall metal layer, wherein the free magnetic layer comprises a first area and a second area located on both sides of the first area;
- disposing a barrier layer on the free magnetic layer, wherein the barrier layer comprises a first area and a second area located on both sides of the first area, the first area of the barrier layer is disposed on the first area of the free magnetic layer, and the second area of the barrier layer is disposed on the second area of the free magnetic layer, wherein the second area of the barrier layer is continuously etched using the patterned photoresist layer as a mask such that the thickness of the second area is smaller than that of the first area of the barrier layer;
- disposing a pinned layer on the barrier layer;
- disposing a patterned photoresist layer on the pinned layer;
- and
- etching the pinned layer using the patterned photoresist layer as a mask to expose the second area of the barrier layer.
Dependencies are inferred from the claim text.