Vertical memory cells and memory devices using the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Chieh Mo, Shih-Chi Kuo
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Abstract
Vertical memory cells and memory devices using the same are disclosed. In one example, a memory cell formed on a backend layer over a substrate is disclosed. The memory cell includes: a first electrode, a second electrode and a magnetic tunnel junction. The first electrode has sidewalls and a bottom surface disposed over the backend layer. The second electrode has sidewalls and a bottom surface in contact with the backend layer. The magnetic tunnel junction is formed between the first electrode and the second electrode. The magnetic tunnel junction is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.
Claims20
A memory cell formed on a backend layer over a substrate, comprising:
- a first electrode with sidewalls and a bottom surface disposed over the backend layer;
- a second electrode with sidewalls and a bottom surface in contact with the backend layer;
- and
- a magnetic tunnel junction formed between the first electrode and the second electrode, wherein the magnetic tunnel junction is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.
A memory device, comprising:
- a backend layer over a substrate;
- and
- a plurality of memory cells formed on the backend layer, wherein each of the plurality of memory cells comprises
- a first electrode having a sidewall that extends substantially perpendicular to the backend layer disposed over the substrate,
- a second electrode having a sidewall that extends substantially perpendicular to the backend layer and
- a magnetic tunnel junction formed between the first electrode and the second electrode, wherein the magnetic tunnel junction is arranged between the sidewalls of the first electrode and the second electrode.
A method for forming a memory cell, comprising:
- forming an inter-metal dielectric layer on a backend layer;
- removing one or more portions of the inter-metal dielectric layer to form a stack comprising a sidewall;
- forming a first electrode layer over the stack and the backend layer;
- forming a magnetic tunnel junction layer over the first electrode layer;
- forming a second electrode layer over the magnetic tunnel junction layer;
- and
- removing portions of the first electrode layer, the magnetic tunnel junction layer and the second electrode layer, wherein the remaining portions of the first electrode layer, the magnetic tunnel junction layer and the second electrode layer adjoin the sidewall of the stack and extend along a direction perpendicular to an upper surface of the backend layer.
Dependencies are inferred from the claim text.