Back to results
US 2019/0164480 A1Published application
Field-effect transistor, display element, image display, system, and composition
AssigneeRicoh Company, Ltd.
InventorsRyoichi SAOTOME, Naoyuki UEDA, Yuki NAKAMURA, Yukiko ABE, Shinji MATSUMOTO, Yuji SONE, Sadanori ARAE, Minehide KUSAYANAGI
Life of this patent
Estimating the term…
Abstract
A field-effect transistor includes a gate electrode to apply a gate voltage, a source electrode and a drain electrode to take electric current out, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes an oxide including silicon and one or two or more alkaline earth metal elements.
Claims14
1-8. (canceled)
A field-effect transistor comprising:
- a gate electrode;
- a source electrode;
- a drain electrode;
- a semiconductor layer, which is disposed adjacent to the source electrode and the drain electrode;
- and
- a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer,
- wherein the gate insulating layer comprises SiO2 and MgO.
4 more elements
Dependencies are inferred from the claim text.