Flux bias lines below qubit plane
AssigneeIntel Corporation
InventorsJeanette M. Roberts, Ravi Pillarisetty, Zachary R. Yoscovits, James S. Clarke, David J. Michalak
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Abstract
Described herein are structures that include flux bias lines for controlling frequencies of qubits in quantum circuits. An exemplary structure includes a substrate, a qubit provided over a surface of the substrate, and a flux bias line provided below the surface of the substrate and configured to control the frequency of the qubit via a magnetic field generated as a result of a current flowing through the flux bias line. Methods for fabricating such structures are disclosed as well.
Claims25
A quantum integrated circuit package for controlling a frequency of a qubit, the quantum integrated circuit package comprising:
- a substrate;
- a qubit disposed over a surface of the substrate;
- and
- a flux bias line below the surface of the substrate.
A method for fabricating a quantum circuit package, the method comprising:
- implanting dopants in a portion of a top layer of a substrate to form a flux bias line, wherein the substrate is a silicon layer;
- activating the implanted dopants;
- epitaxially growing silicon on the top layer of the substrate;
- and
- providing a qubit over or on a surface of the epitaxially grown silicon, above the flux bias line.
A method for fabricating a quantum circuit package, the method comprising:
- patterning a flux bias line on or over a first substrate;
- bonding the first substrate with an inverted second substrate, wherein the second substrate comprises a silicon on insulator (SOI) layer;
- removing a portion of the second substrate until a surface of the SOI layer is exposed;
- and
- forming a qubit over or on the SOI layer, above the flux bias line.
Dependencies are inferred from the claim text.