Back to results
US 2019/0163858 A1Published application
Method of designing a mask and method of manufacturing a semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-Ho YANG, Jun-Young JANG, Chang-Hwan KIM, Sung-Soo SUH
Life of this patent
Estimating the term…
Abstract
In a method of designing a mask, a first mask including an active region, a gate structure, and a gate tap partially overlapping the active region and the gate structure is designed. The first mask is changed so that a portion of the gate tap is extended. An OPC is performed on the changed first mask to design a second mask.
Claims20
A method of designing a mask, the method comprising:
- designing a first mask including an active region, a gate structure, and a gate tap, the gate tap partially overlapping the active region and the gate structure;
- changing the first mask so that a portion of the gate tap is extended;
- and
- performing an OPC on the changed first mask to design a second mask.
1 more element
A method of designing a mask, the method comprising:
- designing a mask including an active region, gate structures each extending in a first direction, and gate taps including at least one gate tap partially overlapping the active region and one of the gate structures;
- changing the mask so that a portion of the at least one gate tap at an outside of the active region is extended in the first direction until an edge of the at least one gate tap contacts another one of the gate structures or another one of the gate taps;
- and
- performing an OPC on the changed mask.
1 more element
A method of designing a mask, the method comprising:
- forming an isolation pattern on a substrate to define an active region;
- and
- forming a first gate structure on the active region and the isolation pattern and a second gate structure on the isolation pattern, the first gate structure extending in a first direction substantially parallel to an upper surface of the substrate, and the second gate structure extending in a second direction substantially parallel to the upper surface of the substrate and crossing the first direction and contacting the first gate structure,
- wherein a first portion of the first gate structure adjacent the second gate structure on the isolation pattern has a width in the second direction greater than a width in the second direction of a second portion of the first gate structure on a central portion of the active region.
1 more element
Dependencies are inferred from the claim text.