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US 2019/0163065 A1Published application
Patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Takeshi Sasami, Tomohiro Kobayashi
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Abstract
A pattern having a good balance of sensitivity, resolution and LWR is formed by providing a resist film comprising a base resin comprising recurring units having a C4-C6 tertiary alkoxy or alkoxycarbonyl group as an acid labile group and recurring units capable of generating a backbone-bound acid upon exposure, exposing the resist film to radiation, optionally post-exposure baking the resist film at a low temperature of 30-70° C., and developing the film.
Claims12
A process for forming a pattern, comprising the steps of:
- (i) exposing a resist film comprising a base resin to high-energy radiation, the base resin comprising recurring units having the formula (a1) and/or recurring units having the formula (a2), and recurring units capable of generating a polymer backbone-bound acid upon exposure,
- (ii) optionally post-exposure baking the resist film at 30 to 70° C., and
- (iii) developing the resist film after step (ii),
- wherein RA is each independently hydrogen or methyl, R1 and R2 are each independently a C4-C6 tertiary alkyl group, R3 is each independently fluorine or methyl, m is an integer of 0 to 4, X1 is a single bond, phenylene group, naphthylene group, or a C1-C12 linking group containing at least one moiety selected from an ester bond, lactone ring, phenylene and naphthylene, and X2 is a single bond, ester bond or amide bond.
1 more element
Dependencies are inferred from the claim text.