US 2019/0163061 A1 · POLYIMIDE PRECURSOR AND LITHOGRAPHY PATTERN FORMED BY THE SAME

Abstract

The present invention relates to a polyimide precursor and a lithography pattern formed by the same. The polyimide precursor has a repeating unit having a structure of formula (I): in the formula (I), Ar represents a tetravalent group derivated from a tetracarboxylic dianhydride compound; R1 represents a divalent group derivated from a diamine compound; and R2 independently represent a thermal-crosslinking group, a photosensitive-crosslinking group, or a hydrogen atom. The polyimide precursor has an excellent pattern-forming ability.

Claims18

Dependent claims

A polyimide precursor, having a repeating unit having a structure of following formula (I):

in the formula (I), Ar represents a tetravalent group derivated from a tetracarboxylic dianhydride compound;
R1 represents a divalent group derivated from a diamine compound;
and R2 independently represents a thermal-crosslinking group, a photosensitive-crosslinking group, or a hydrogen atom.

Dependencies are inferred from the claim text.

Facts

Application

15/908,781Filed 28 Feb 2018

Priority

TW 10614105624 Nov 2017

Published

30 May 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification16 codes

G03F 7/0387
Macromolecular compounds which are rendered insoluble or differentially wettable: polyamides or polyimides
C08G 73/1014
Containing chain terminating or branching agents: in the form of anhydrid
C08G 73/1053
Polyimides containing oxygen in the form of ether bonds in the main chain: with oxygen only in the tetracarboxylic moiety
C08G 73/1082
Partially aromatic polyimides: wholly aromatic in the tetracarboxylic moiety

Polyimide precursor and lithography pattern formed by the same

Life of this patent

Polyimide precursor and lithography pattern formed by the same

Life of this patent

Abstract

Claims18