Extreme ultraviolet (euv) mask for lithography and associated methods

A method of providing a monitoring macro, the method comprising:

• generating a first simulation model by performing a first simulation on a sample macro including a plurality of pattern arrays arranged and spaced apart from each other and each including a plurality of patterns;
• generating a second simulation model by performing a second simulation different from the first simulation on the sample macro;
• comparing the first and second simulation models with each other;
• and
• constructing a monitoring macro by selecting at least some of the plurality of patterns of the sample macro.

An optical proximity correction (OPC) method, the method comprising:

• constructing a first monitoring macro considering aberration caused by a slit used in an extreme ultraviolet (EUV) exposure process;
• generating an OPC model of an EUV mask design layout including a plurality of second monitoring macros, wherein each of the plurality of second monitoring macros is substantially identical to the first monitoring macro;
• and
• correcting the OPC model.