Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

A phase shift mask comprising a phase shift film having a transfer pattern on a transparent substrate, wherein:

• the phase shift film has a function to transmit an exposure light of an ArF excimer laser at a transmittance of 1% or more, and a function to generate a phase difference of 150 degrees or more and 200 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through air for a same distance as a thickness of the phase shift film,
• the phase shift film has a structure comprising three sets or more of a set of a stacked structure comprising a high transmitting layer and a low transmitting layer,
• the high transmitting layer and the low transmitting layer are made of a material consisting essentially of silicon and nitrogen, or a material consisting essentially of silicon, nitrogen, and one or more elements selected from a metalloid element and a non-metallic element,
• the high transmitting layer comprises 50 atom % or more nitrogen content and has a thickness of 11 nm or less, and
• the low transmitting layer comprises less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.