Method And System For A Low Parasitic Silicon High-Speed Phase Modulator

A system for communication, the system comprising:

• an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer is on an oxide layer and the oxide layer is on a silicon substrate;
• first p-doped and n-doped regions on opposite sides along a length forming the PN junction waveguide with only p-doping on a first of said opposite sides and only n− doping on a second of said opposite sides;
• and
• raised fingers of p-doped and n-doped regions along said PN junction waveguide, wherein a major axis of said raised fingers is perpendicular to said PN junction waveguide and a minor axis of said raised fingers is parallel to said PN junction waveguide, said optical phase modulator being operable to:
• receive an input optical signal;
• and
• apply a voltage to said raised fingers to modulate said received input optical signal.

A system for communication, the system comprising:

• a Mach-Zehnder optical modulator that comprises a PN junction waveguide formed in a silicon layer on an oxide layer, wherein the silicon layer and the oxide layer are part of a silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) substrate;
• p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide with only p-doping on a first of said opposite sides and only n-doping on a second of said opposite sides;
• and
• raised fingers of p-doped and n-doped regions along said PN junction waveguide, wherein a major axis of said raised fingers is perpendicular to said PN junction waveguide and a minor axis of said raised fingers is parallel to said PN junction waveguide, said Mach-Zehnder optical modulator being operable to:
• receive an input optical signal;
• and
• apply a voltage to said raised fingers to modulate said received input optical signal.