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US 2019/0162903 A1Published application
Method and structure providing optical isolation of a waveguide on a silicon-on-insulator substrate
AssigneeMicron Technology, Inc.
InventorRoy E. Meade
Life of this patent
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Abstract
Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.
Claims10
A method of forming an integrated structure, the method comprising:
- forming a shallow trench isolation region in a first semiconductor substrate;
- filing a trench of the shallow trench isolation region with a first dielectric material having a first index of refraction;
- forming a waveguide on a second substrate, wherein the second substrate includes a second dielectric material, wherein the waveguide is formed of a semiconductor material over the second dielectric material, and wherein the semiconductor material has a second index of refraction greater than the first index of refraction
- attaching the second substrate to the first semiconductor substrate, wherein the second dielectric material faces the first substrate and wherein the waveguide is located over the shallow trench isolation region.
1 more element
Dependencies are inferred from the claim text.