Growth of Crystalline Materials on Two-Dimensional Inert Materials

A method of growing epitaxial GaN or AlN crystalline materials from two-dimensional inert materials consisting of:

• functionalizing a surface of a two-dimensional inert material and creating a functionalized surface;
• wherein the two-dimensional inert material is graphene;
• utilizing Atomic Layer Epitaxy;
• growing a nucleation layer from the functionalized surface;
• wherein the nucleation layer is grown via Atomic Layer Epitaxy;
• and
• growing a crystalline material from the nucleation layer;
• wherein the crystalline material is a monolayer crystalline epitaxial material;
• wherein the functionalizing a surface of a two-dimensional inert material further comprises pretreating the surface with ex-situ and/or in-situ pretreatment;
• wherein the pretreating the surface with ex-situ pretreatment comprises treating with one selected from the group consisting of XeF2, plasma such as N2, H2, O2, NH3, NOx, and wet chemicals;
• wherein the pretreating the surface with in-situ pretreatment is with a plasma;
• wherein the plasma is one selected from the group consisting of H2, N2, mixture of N2 and H2, and ammonia;
• and
• wherein the monolayer crystalline material is a III-V compound semiconductor or a II-VI compound semiconductor.