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US 2019/0161886 A1Published application
Sic epitaxial growth apparatus
AssigneeShowa Denko K.K.
InventorsYasunori MOTOYAMA, Yoshishige OKUNO, Yoshikazu UMETA, Keisuke FUKADA
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Abstract
A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; and a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor, in which an unevenness is formed on a radiation-receiving surface of the susceptor, which faces a first surface of the heater provided at the susceptor side, and the unevenness is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view.
Claims9
A SiC epitaxial growth apparatus comprising:
- a susceptor having a mounting surface on which a wafer is placable;
- and
- a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor,
- wherein an unevenness is formed on a radiation-receiving surface of the susceptor, which faces a first surface of the heater provided at the susceptor side, and the unevenness is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view.
1 more element
Dependencies are inferred from the claim text.