Sic epitaxial growth apparatus
AssigneeShowa Denko K.K.
InventorsYasunori MOTOYAMA, Yoshishige OKUNO, Yoshikazu UMETA, Keisuke FUKADA
Life of this patent
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Abstract
A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.
Claims11
A SiC epitaxial growth apparatus comprising:
- a susceptor having a mounting surface on which a wafer is placable;
- a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor;
- and
- an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface, and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view,
- wherein the radiation member has a higher emissivity than that of the susceptor and has an exposed portion when viewed from the heater.
Dependencies are inferred from the claim text.