Method for forming tungsten film
AssigneeTokyo Electron Limited
InventorsShintaro Aoyama, Mikio Suzuki, Yumiko Kawano, Kohichi Satoh
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Abstract
Provided is a method for forming a tungsten film in which a tungsten film is formed on the surface of a substrate, the method including: disposing a substrate having an amorphous layer on the surface thereof inside a treatment container under a depressurized atmosphere; heating the substrate inside the treatment container; and supplying, into the treatment container, WF6 gas which is a tungsten raw material and H2 gas which is a reducing gas, and forming a main tungsten film on the amorphous layer.
Claims43
A tungsten film forming method for forming a tungsten film on a surface of a substrate, the method comprising:
- disposing a substrate having an amorphous layer on a surface thereof in a processing chamber under a depressurized atmosphere;
- heating the substrate in the processing chamber;
- and
- forming a main tungsten film on the amorphous layer by supplying into the processing chamber WF6 gas as a tungsten source gas and H2 gas as a reducing gas.
A tungsten film forming method for forming a tungsten film on a surface of a substrate, the method comprising:
- disposing a substrate in a processing chamber under a depressurized atmosphere;
- heating the substrate in the processing chamber;
- forming an initial tungsten film that is an amorphous layer on the surface of the substrate by sequentially supplying into the processing chamber WF6 gas as a tungsten source gas and a reducing gas with purging of the processing chamber interposed therebetween;
- and
- forming a main tungsten film on the initial tungsten film by supplying into the processing chamber WF6 gas as a tungsten source gas and H2 gas as a reducing gas.
A tungsten film forming method for forming a tungsten film on a surface of a substrate, the method comprising:
- disposing a substrate in a processing chamber under a depressurized atmosphere;
- heating the substrate in the processing chamber;
- forming an initial tungsten film that is a crystalline layer on the surface of the substrate by sequentially supplying WF6 gas as a tungsten source gas and a reducing gas into the processing chamber with purging of the processing chamber interposed therebetween;
- forming an amorphous layer on the initial tungsten film;
- and
- forming a main tungsten film on the amorphous layer by supplying WF6 gas as a tungsten source gas and H2 gas as a reducing gas into the processing chamber.
A tungsten film forming method for forming a tungsten film on a surface of a substrate, the method comprising:
- disposing a substrate in a processing chamber under a depressurized atmosphere;
- heating the substrate in the processing chamber,
- forming an amorphous layer on the surface of the substrate;
- and
- forming a main tungsten film on the amorphous layer by supplying WF6 gas as a tungsten source gas and H2 gas as a reducing gas into the processing chamber.
A tungsten film forming method for forming a tungsten film on a surface of a substrate, the method comprising:
- preparing a substrate;
- forming an amorphous layer on the surface of the substrate;
- heating the substrate in a processing chamber under a depressurized atmosphere;
- and
- forming a main tungsten film on the amorphous layer by supplying WF6 gas as a tungsten source gas and H2 gas as a reducing gas into the processing chamber.
A non-transitory storage medium storing a program that is executed on a computer to control a film forming apparatus to form a tungsten film on a surface of a substrate, wherein the program, when executed on the computer, controls the film forming apparatus to:
- dispose the substrate having an amorphous layer on the surface thereof in a processing chamber under a depressurized atmosphere;
- heat the substrate in the processing chamber;
- and
- form a main tungsten film on the amorphous layer by supplying into the processing chamber WF6 gas as a tungsten source gas and H2 gas as a reducing gas.
A non-transitory storage medium storing a program that is executed on a computer to control a film forming apparatus to form a tungsten film on a surface of a substrate, wherein the program, when executed on the computer, controls the film forming apparatus to:
- dispose the substrate in a processing chamber under a depressurized atmosphere;
- heat the substrate in the processing chamber;
- form an initial tungsten film that is an amorphous layer on the surface of the substrate by sequentially supplying into the processing chamber WF6 gas as a tungsten source gas and a reducing gas with purging of the processing chamber interposed therebetween;
- form a main tungsten film on the initial tungsten film by supplying into the processing chamber WF6 gas as a tungsten source gas and H2 gas as a reducing gas.
A non-transitory storage medium storing a program that is executed on a computer to control a film forming apparatus to form a tungsten film on a surface of a substrate, wherein the program, when executed on the computer, controls the film forming apparatus to:
- dispose the substrate in a processing chamber under a depressurized atmosphere;
- heat the substrate in the processing chamber;
- form an initial tungsten film that is a crystalline layer on the surface of the substrate by sequentially supplying WF6 gas as a tungsten source gas and a reducing gas into the processing chamber with purging of the processing chamber interposed therebetween;
- form an amorphous layer on the initial tungsten film;
- and
- form a main tungsten film on the amorphous layer by supplying WF6 gas as a tungsten source gas and H2 gas as a reducing gas into the processing chamber.
A non-transitory storage medium storing a program that is executed on a computer to control a film forming apparatus to form a tungsten film on a surface of a substrate, wherein the program, when executed on the computer, controls the film forming apparatus to:
- dispose the substrate in a processing chamber under a depressurized atmosphere;
- heat the substrate in the processing chamber;
- form an amorphous layer on the surface of the substrate;
- and
- form a main tungsten film on the amorphous layer by supplying WF6 gas as a tungsten source gas and H2 gas as a reducing gas into the processing chamber.
A non-transitory storage medium storing a program that is executed on a computer to control a film forming apparatus to form a tungsten film on a surface of a substrate, wherein the program, when executed on the computer, controls the film forming apparatus to:
- prepare a substrate;
- form an amorphous layer on the surface of the substrate,
- heat the substrate in a processing chamber under a depressurized atmosphere, and
- form a main tungsten film on the amorphous layer by supplying WF6 gas as a tungsten source gas and H2 gas as a reducing gas into the processing chamber.
Dependencies are inferred from the claim text.