Sputtering Target and Production Method Therefor
AssigneeJX Nippon Mining & Metals Corporation
InventorsYasushi Morii, Yoshimasa Koido
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Abstract
A sputtering target according to this invention comprises an alloy of Al and Sc and contains from 25 at. % to 50 at. % of Sc. The sputtering target has an oxygen content of 2000 ppm by mass or less, and a variation in Vickers hardness (Hv) of 20% or less.
Claims10
A sputtering target comprising an alloy of Al and Sc and containing from 25 at. % to 50 at. % of Sc, the sputtering target having an oxygen content of 2000 ppm by mass or less, and a variation in Vickers hardness (Hv) of 20% or less, wherein the variation in Vickers hardness (Hv) is calculated by measuring Vickers hardness at a plurality of measurement points on a target surface, determining an average value and standard deviation of measured values at the measurement points, dividing the standard deviation by the average value, and expressing in a percentage.
A method for producing a sputtering target, comprising:
- a melting step of melting, in an inert gas or vacuum atmosphere, an Al raw material together with a Sc raw material having an oxygen content of 3000 ppm by mass or less and then cooling in an inert gas or vacuum atmosphere to obtain an Al—Sc alloy ingot containing from 25 at. % to 50 at. % of Sc;
- and
- a forging step of applying a pressure to the ingot to subject the ingot to plastic working.
Dependencies are inferred from the claim text.