Nanocrystalline graphene and method of forming nanocrystalline graphene
AssigneeSamsung Electronics Co., Ltd.
InventorsHyunjae SONG, Keunwook SHIN, Hyeonjin SHIN, Changseok LEE, Changhyun KIM, Kyungeun BYUN, Seungwon LEE, Eunkyu LEE
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Abstract
Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.
Claims54
A graphene product comprising:
- a nanocrystalline graphene,
- the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to about 99%.
A graphene product comprising:
- a nanocrystalline graphene,
- the nanocrystalline graphene including nano-sized crystals and including hydrogen in an amount of about 1 at % to about 20 at %.
A method of forming a graphene product including a nanocrystalline graphene through a plasma enhanced chemical vapor deposition process, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to 99%, the method comprising:
- growing the nanocrystalline graphene directly on a substrate using a plasma of a reaction gas at a temperature of about 700° C. or less, the reaction gas including a carbon source and an inert gas.
A method of forming a graphene product including a nanocrystalline graphene through a plasma enhanced chemical vapor deposition process, the nanocrystalline graphene including nano-sized crystals and having a ratio of carbon having an sp2 bonding structure to total carbon within a range of about 50% to 99%, the method comprising:
- injecting a reaction gas into a reaction chamber, the reaction gas including a carbon source and an inert gas into a reaction chamber;
- generating a plasma of the reaction gas in the reaction chamber;
- and
- growing the nanocrystalline graphene directly on a surface of a substrate using the plasma of the reaction gas at a temperature of about 700° C. or less.
A graphene product comprising:
- a nanocrystalline graphene,
- the nanocrystalline graphene including nano-sized crystals having a size of about 0.5 nm to about 100 nm,
- the nanocrystalline graphene having a D-parameter of an Auger spectrum of carbon in a range of about 18 eV to 22.9 eV.
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Dependencies are inferred from the claim text.