Bonding process for forming semiconductor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hang CHANG, I-Shi WANG, Jen-Hao LIU
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Abstract
A method for forming a semiconductor device structure is provided. The method includes receiving a first wafer having multiple predetermined die areas. The method also includes forming a recess in the first wafer, and the recess extends in a direction substantially parallel to an edge of one of the predetermined die areas. The method further includes receiving a second wafer. In addition, the method includes bonding the first wafer and the second wafer at an elevated temperature after the recess is formed.
Claims20
A method for forming a semiconductor device structure, comprising:
- receiving a first wafer having a plurality of predetermined die areas;
- forming a recess in the first wafer, wherein the recess extends in a direction substantially parallel to an edge of one of the predetermined die areas;
- receiving a second wafer;
- and
- bonding and heating the first wafer and the second wafer after the recess is formed.
A method for forming a semiconductor device structure, comprising:
- receiving a first wafer having a plurality of predetermined die areas, wherein the predetermined die areas are spaced apart from each other by a plurality of predetermined scribe lines;
- forming a plurality of recesses in some of the predetermined scribe lines;
- receiving a second wafer;
- and
- bonding and heating the first wafer and the second wafer after the recesses are formed.
A method for forming a semiconductor device structure, comprising:
- receiving a first wafer;
- forming a plurality of recesses in the first wafer to surround an area of the first wafer;
- receiving a second wafer;
- and
- bonding and heating the first wafer and the second wafer after the plurality of recesses are formed.
Dependencies are inferred from the claim text.