Substrate processing apparatus
AssigneeEbara Corporation
InventorsYuki WATANABE, Keita YAGI
Life of this patent
Estimating the term…
Loading patent…
AssigneeEbara Corporation
InventorsYuki WATANABE, Keita YAGI
Estimating the term…
A substrate processing apparatus includes a polishing head defining plural pressure chambers D1 to D5 for pressing a wafer W on a polishing pad 42, a pressure control unit performing pressure feedback control by individually controlling pressures in the pressure chambers D1 to D5, a film thickness measurement unit measuring a film thickness distribution of the wafer W being polished, a storage unit storing multiple pieces of information on a preset pressure of the pressure chambers D1 to D5, and a response characteristic acquisition unit changing the preset pressure every time a predetermined condition is satisfied during polishing of the wafer W, measuring a polishing rate applied to the wafer W, and acquiring a response characteristic of the polishing of the wafer W. The response characteristic indicates responsiveness of the polishing of the wafer W to the pressure feedback. The response characteristic is acquired based on the obtained polishing rates.
A substrate processing apparatus for polishing a substrate by pressing the substrate against a polishing pad, the substrate processing apparatus comprising:
A non-transitory computer readable storage medium including an executable code causing a computer of a substrate processing apparatus for polishing a substrate by pressing the substrate against a polishing pad to execute:
A method of acquiring a response characteristic of polishing of a substrate in a substrate processing apparatus polishing the substrate by pressing the substrate against a polishing pad, the method comprising the steps of:
Dependencies are inferred from the claim text.