Heated substrate support
AssigneeApplied Materials, Inc.
InventorGOVINDA RAJ
Life of this patent
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Abstract
A heater for a semiconductor processing chamber is disclosed that includes a ceramic body, and a resistive heating element embedded in the ceramic body, the resistive heating element disposed in a heater coil having an inner central sector and an outer central sector, the inner central sector having a plurality of first peaks and the outer central sector having a plurality of second peaks, wherein the number of first peaks is less than about fifty-six, and the number of second peaks is less than about eighty.
Claims20
A substrate heater for a semiconductor processing chamber, the heater comprising:
- a circular ceramic body having an outer diameter;
- a plurality of purge openings disposed in the ceramic body;
- and
- a resistive heating element embedded in the ceramic body, the resistive heating element disposed in a heater coil pattern, the heater coil pattern comprising:
- an outer sector;
- a primary ring, the primary ring comprising a first conductive element, wherein the first conductive element comprises a plurality of first peaks, a height of the first peak is from about 2% to about 4% of the outer diameter of the circular ceramic body;
- and
- a secondary ring, the secondary ring comprising a second conductive element, wherein the second conductive element comprises a plurality of second peaks, the number of second peaks is greater than the number of first peaks, the height of the second peak is about 2% to about 4% of the outer diameter of the circular ceramic body.
A substrate heater for a semiconductor processing chamber, the heater comprising:
- a circular ceramic body having an outer diameter;
- a plurality of purge openings disposed in the ceramic body;
- and
- a resistive heating element embedded in the ceramic body, the resistive heating element disposed in a heater coil pattern, the heater coil pattern comprising:
- an outer sector;
- a primary ring, the primary ring comprising a first conductive element, wherein the first conductive element comprises a plurality of first peaks, the number of first peaks is less than about fifty-six, a height of the first peak is from about 2% to about 4% of the outer diameter of the circular ceramic body, an average radius of the primary ring is from about 15% to about 19% of the outer diameter of the circular body;
- and
- a secondary ring, the secondary ring comprising a second conductive element, wherein the second conductive element comprises a plurality of second peaks, the number of second peaks is less than about eighty, the height of the second peak is from about 2% to about 4% of the outer diameter of the circular ceramic body, an average radius of the secondary ring is from about 22% to about 26% of the outer diameter of the circular body.
Dependencies are inferred from the claim text.