Method and electronic circuit for driving a transistor device

2:

• The method of claim 1, wherein adjusting the voltage level comprises selecting the voltage level from a voltage level range ranging from a minimum voltage level to a maximum voltage level.

3:

• The method of claim 2, wherein selecting the voltage level comprises selecting one of at least two discrete voltage levels.

4:

• The method of claim 2,
• wherein each of the minimum voltage level and the maximum voltage level is associated with a statistical lifetime of the transistor device, and
• wherein the statistical lifetime associated with the maximum voltage level is less than 10% of the statistical lifetime associated with the minimum voltage level.

5:

• The method of claim 4,
• wherein the statistical lifetime is associated with a failure rate, and
• wherein the failure rate associated with the lifetime is selected from between 10−1 and 10−6.

6:

• The method of claim 4, wherein the statistical lifetime associated with the minimum voltage level is greater than 10 years, greater than 50 years, or greater than 100 years.

7:

• The method of claim 2, wherein a difference between the maximum voltage level and the minimum voltage level is greater than 5V, greater than 10V or greater than 15V.

9:

• The method of claim 1, wherein the transistor device has a voltage blocking capability higher than 400V, higher than 600V, or higher than 800V.

10:

• The method of claim 1, further comprising:
• obtaining the load signal based on measuring at least one of the current through the transistor device or the voltage across a load path of the transistor device.

11:

• The method of claim 1, further comprising:
• receiving the load signal from a load circuit connected to the transistor device.

12:

• The method of claim 1, wherein a load path or the transistor device is connected between a power source and a load circuit.

13:

• The method of claim 12, wherein the power source is a DC power source.

14:

• The method of claim 1, wherein driving the transistor device in the on-state comprises driving the transistor device in the on-state based on a control signal.

16:

• The electronic circuit of claim 13, further comprising the transistor device.

17:

• The electronic method of claim 15,
• wherein the drive circuit is configured to adjust the voltage level by selecting the voltage level from a voltage level range ranging from a minimum voltage level to a maximum voltage level.

18:

• The electronic circuit of claim 17,
• wherein each of the minimum voltage level and the maximum voltage level is associated with statistical lifetime of the transistor device, and
• wherein the statistical lifetime associated with the maximum voltage level is less than 10% of the statistical lifetime associated with the minimum voltage level.

19:

• The electronic circuit of claim 18,
• wherein the statistical lifetime is associated with a failure rate, and
• wherein the failure rate associated with the lifetime is selected from between 10−1 and 10−6.

20:

• The electronic circuit of claim 18, wherein the statistical lifetime associated with the minimum voltage level is greater than 10 years, greater than 50 years, or greater than 100 years.